Транзистор: N-MOSFET; EETMOS3; полевой; 60В; 153А; Idm: 612А; 178Вт Технические параметры
- Case: FP (SC83 similar)
- Channel kind: enhanced
- Drain current: 153A
- Drain-source voltage: 60V
- Gate charge: 105нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 3mΩ
- Polarisation: unipolar
- Power dissipation: 178W
- Pulsed drain current: 612A
- Technology: EETMOS3
- Type of transistor: N-MOSFET