Технические параметры
- Case: FE (TO252AB similar)
- Channel kind: enhanced
- Drain current: 14A
- Drain-source voltage: 60V
- Gate charge: 16.3нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 39mΩ
- Polarisation: unipolar
- Power dissipation: 24W
- Pulsed drain current: 42A
- Technology: EETMOS3
- Type of transistor: N-MOSFET