Транзистор: N-MOSFET; EETMOS4; полевой; 40В; 140А; Idm: 560А; 217Вт Технические параметры
- Case: LF (MO235B similar)
- Channel kind: enhanced
- Drain current: 140A
- Drain-source voltage: 40V
- Gate charge: 122нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 1.42mΩ
- Polarisation: unipolar
- Power dissipation: 217W
- Pulsed drain current: 560A
- Technology: EETMOS4
- Type of transistor: N-MOSFET