Транзистор: N-MOSFET; EETMOS3; полевой; 100В; 126А; Idm: 504А; 238Вт Технические параметры
- Case: FP (SC83 similar)
- Channel kind: enhanced
- Drain current: 126A
- Drain-source voltage: 100V
- Gate charge: 160нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 4.8mΩ
- Polarisation: unipolar
- Power dissipation: 238W
- Pulsed drain current: 504A
- Technology: EETMOS3
- Type of transistor: N-MOSFET