Транзистор: N-MOSFET; EETMOS4; полевой; 40В; 105А; Idm: 315А; 168Вт Технические параметры
- Case: LF (MO235B similar)
- Channel kind: enhanced
- Drain current: 105A
- Drain-source voltage: 40V
- Gate charge: 76нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 2.7mΩ
- Polarisation: unipolar
- Power dissipation: 168W
- Pulsed drain current: 315A
- Technology: EETMOS4
- Type of transistor: N-MOSFET