Транзистор: N-MOSFET; EETMOS3; полевой; 120В; 100А; Idm: 400А; 238Вт Технические параметры
- Case: FP (SC83 similar)
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 120V
- Gate charge: 164нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 7mΩ
- Polarisation: unipolar
- Power dissipation: 238W
- Pulsed drain current: 400A
- Technology: EETMOS3
- Type of transistor: N-MOSFET