Транзистор: N-MOSFET; EETMOS2; полевой; 40В; 100А; Idm: 400А; 175Вт Технические параметры
- Case: FH (TO263AB)
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 40V
- Gate charge: 100нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 2mΩ
- Polarisation: unipolar
- Power dissipation: 175W
- Pulsed drain current: 400A
- Technology: EETMOS2
- Type of transistor: N-MOSFET