Транзистор: N-MOSFET; полевой; 100В; 35А; Idm: 120А; 54Вт Технические параметры
- Case: DFN3.3x3.3
- Channel kind: enhanced
- Drain current: 35A
- Drain-source voltage: 100V
- Gate charge: 20нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 20mΩ
- Polarisation: unipolar
- Power dissipation: 54W
- Pulsed drain current: 120A
- Type of transistor: N-MOSFET