Транзистор: N-MOSFET; SPLIT GATE TRENCH; полевой; 150В; 15А; 29Вт Технические параметры
- Case: DFN5x6
- Channel kind: enhanced
- Drain current: 15A
- Drain-source voltage: 150V
- Gate charge: 11.6нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: YANGJIE TECHNOLOGY
- Mounting: SMD
- On-State Resistance: 75mΩ
- Polarisation: unipolar
- Power dissipation: 29W
- Pulsed drain current: 50A
- Technology: SPLIT GATE TRENCH
- Type of transistor: N-MOSFET