Транзистор: N-MOSFET; полевой; RF; 25В; 5А; 26,7Вт; PowerFLAT™; SMT Технические параметры
- Case: PowerFLAT™
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 25V
- Efficiency: 50%
- Electrical mounting: SMT
- Frequency: 500MHz
- Gain: 15dB
- Kind of package: tape
- Manufacturer: STM
- Output power: 8W
- Polarisation: unipolar
- Power dissipation: 26.7W
- Transistor kind: RF
- Type of transistor: N-MOSFET