Транзистор: IGBT; PT; 1,2кВ; 46А; 543Вт; T-Max Технические параметры
- Manufacturer: Microchip
- Technology: PT
- Collector current: 46A
- Collector-emitter voltage: 1.2kV
- Gate charge: 150nC
- Turn-on time: 36ns
- Turn-off time: 220ns
- Kind of package: tube
- Gate - emitter voltage: ±30V
- Pulsed collector current: 140A
- Features of semiconductor devices: co-pack diode
- Mounting: THT
- Case: T-Max
- Type of transistor: IGBT
- Power dissipation: 543W