Транзистор: N-MOSFET; полевой; 20В; 2,1А; Idm: 11,8А; 0,625Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 2.1A
- Drain-source voltage: 20V
- Gate-source voltage: ±8V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.1Ω
- Polarisation: unipolar
- Power dissipation: 0.625W
- Pulsed drain current: 11.8A
- Type of transistor: N-MOSFET