Транзистор: N-MOSFET; полевой; 100В; 130А; Idm: 740А; 380Вт; D2PAK-7 Технические параметры
- Case: D2PAK-7
- Channel kind: enhanced
- Drain current: 130A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 4mΩ
- Polarisation: unipolar
- Power dissipation: 380W
- Pulsed drain current: 740A
- Technology: HEXFET®
- Type of transistor: N-MOSFET