Транзистор: N-MOSFET; полевой; 30В; 2,9А; Idm: 16А; 1Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 2.9A
- Drain-source voltage: 30V
- Gate-source voltage: ±12V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.08Ω
- Polarisation: unipolar
- Power dissipation: 1W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET