Транзистор: N-MOSFET; полевой; 20В; 1,9А; Idm: 8А; 625мВт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Drain current: 1.9A
- Drain-source voltage: 20V
- Gate-source voltage: ±12V
- Manufacturer: Diodes/Zetex
- Mounting: SMD
- On-State Resistance: 0.12Ω
- Polarisation: unipolar
- Power dissipation: 0.625W
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET