Транзистор: P-MOSFET; полевой; -60В; -280мА; Idm: -4А; 700мВт Технические параметры
- Case: TO92
- Channel kind: enhanced
- Drain current: -0.28A
- Drain-source voltage: -60V
- Gate-source voltage: ±20V
- Manufacturer: Diodes/Zetex
- Mounting: THT
- On-State Resistance: 5Ω
- Polarisation: unipolar
- Power dissipation: 0.7W
- Pulsed drain current: -4A
- Type of transistor: P-MOSFET