Транзистор: N-MOSFET; полевой; 150В; 50А; Idm: 220А; 142Вт; DSOP8 Технические параметры
- Case: DSOP8
- Channel kind: enhanced
- Drain current: 50A
- Drain-source voltage: 150V
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 15.4mΩ
- Polarisation: unipolar
- Power dissipation: 142W
- Pulsed drain current: 220A
- Type of transistor: N-MOSFET