Транзистор: N-MOSFET; полевой; 30В; 57А; Idm: 117А; 34Вт; SOP8 Технические параметры
- Case: SOP8
- Channel kind: enhanced
- Drain current: 57A
- Drain-source voltage: 30V
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 8.3mΩ
- Polarisation: unipolar
- Power dissipation: 34W
- Pulsed drain current: 117A
- Type of transistor: N-MOSFET