Транзистор: N-MOSFET; полевой; 30В; 134А; Idm: 200А; 90Вт; SOP8 Технические параметры
- Case: SOP8
- Channel kind: enhanced
- Drain current: 134A
- Drain-source voltage: 30V
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 4.2mΩ
- Polarisation: unipolar
- Power dissipation: 90W
- Pulsed drain current: 200A
- Type of transistor: N-MOSFET