Транзистор: N-MOSFET; полевой; 45В; 280А; Idm: 500А; 170Вт; SOP8 Технические параметры
- Case: SOP8
- Channel kind: enhanced
- Drain current: 280A
- Drain-source voltage: 45V
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 1.7mΩ
- Polarisation: unipolar
- Power dissipation: 170W
- Pulsed drain current: 500A
- Type of transistor: N-MOSFET