Транзистор: N-MOSFET; CoolMOSTM; полевой; 800В; 2,5А; Idm: 12А; 63Вт Технические параметры
- Case: PG-TO252-3
- Channel kind: enhanced
- Drain current: 2.5A
- Drain-source voltage: 800V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 1.3Ω
- Polarisation: unipolar
- Power dissipation: 63W
- Pulsed drain current: 12A
- Technology: CoolMOS™
- Type of transistor: N-MOSFET