Транзистор: N-MOSFET; CoolMOSTM; полевой; 650В; 2А; Idm: 9,6А; 38Вт Технические параметры
- Case: PG-TO252
- Channel kind: enhanced
- Drain current: 2A
- Drain-source voltage: 650V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 1.4Ω
- Polarisation: unipolar
- Power dissipation: 38W
- Pulsed drain current: 9.6A
- Technology: CoolMOS™
- Type of transistor: N-MOSFET