Транзистор: N-MOSFET Технические параметры
- Case: TSOP6
- Channel kind: enhanced
- Drain current: 3.8A
- Drain-source voltage: 100V
- Gate charge: 10.4нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: Vishay
- Mounting: SMD
- On-State Resistance: 126mΩ
- Polarisation: unipolar
- Power dissipation: 2.33W
- Pulsed drain current: 14A
- Technology: TrenchFET®
- Type of transistor: N-MOSFET
