Транзистор: N-MOSFET; полевой; 30В; 3,1А; Idm: 16А; 1Вт; SOT223 Технические параметры
- Case: SOT223
- Channel kind: enhanced
- Drain current: 3.1A
- Drain-source voltage: 30V
- Gate-source voltage: ±16V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 45mΩ
- Polarisation: unipolar
- Power dissipation: 1W
- Pulsed drain current: 16A
- Technology: HEXFET®
- Type of transistor: N-MOSFET