Транзистор: N-MOSFET; полевой; 55В; 74А; Idm: 360А; 200Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 74A
- Drain-source voltage: 55V
- Gate-source voltage: ±16V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 8mΩ
- Polarisation: unipolar
- Power dissipation: 200W
- Pulsed drain current: 360A
- Technology: HEXFET®
- Type of transistor: N-MOSFET