Транзистор: N-MOSFET; полевой; 40В; 229А; Idm: 1,3кА; 245Вт; D2PAK7P Технические параметры
- Case: D2PAK-7
- Channel kind: enhanced
- Drain current: 229A
- Drain-source voltage: 40V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 1mΩ
- Polarisation: unipolar
- Power dissipation: 245W
- Pulsed drain current: 1.3kA
- Technology: HEXFET®
- Type of transistor: N-MOSFET