Транзистор: N-MOSFET; полевой; 100В; 43А; Idm: 250А; 140Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 43A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 13.9mΩ
- Polarisation: unipolar
- Power dissipation: 140W
- Pulsed drain current: 250A
- Technology: HEXFET®
- Type of transistor: N-MOSFET