Транзистор: N-MOSFET; полевой; 150В; 70А; Idm: 396А; 375Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 70A
- Drain-source voltage: 150V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 12.1mΩ
- Polarisation: unipolar
- Power dissipation: 375W
- Pulsed drain current: 396A
- Technology: HEXFET®
- Type of transistor: N-MOSFET