Транзистор: N-MOSFET; полевой; 60В; 110А; Idm: 620А; 230Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 110A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 4.2mΩ
- Polarisation: unipolar
- Power dissipation: 230W
- Pulsed drain current: 620A
- Technology: HEXFET®
- Type of transistor: N-MOSFET