Транзистор: N-MOSFET Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 3.8A
- Drain-source voltage: 20V
- Gate-source voltage: ±12V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 40mΩ
- Polarisation: unipolar
- Power dissipation: 2.5W
- Pulsed drain current: 24A
- Type of transistor: N-MOSFET