Транзистор: N-MOSFET Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 0.25A
- Drain-source voltage: 450V
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 4500mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Pulsed drain current: 1.6A
- Type of transistor: N-MOSFET