Транзистор: N-MOSFET Технические параметры
- Case: SOT223
- Channel kind: enhanced
- Drain current: 2.9A
- Drain-source voltage: 60V
- Gate-source voltage: ±16V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 100mΩ
- Polarisation: unipolar
- Power dissipation: 3.3W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET