Транзистор: N-MOSFET Технические параметры
- Case: SOT223
- Channel kind: enhanced
- Drain current: 1A
- Drain-source voltage: 200V
- Gate-source voltage: ±20V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 1500mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Pulsed drain current: 4A
- Type of transistor: N-MOSFET