Транзистор: N-MOSFET Технические параметры
- Case: H2PAK-2
- Channel kind: enhanced
- Drain current: 7.6A
- Drain-source voltage: 1200V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 690mΩ
- Polarisation: unipolar
- Power dissipation: 250W
- Pulsed drain current: 48A
- Type of transistor: N-MOSFET