Транзистор: N-MOSFET Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 2.9A
- Drain-source voltage: 650V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±25V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 1200mΩ
- Polarisation: unipolar
- Power dissipation: 60W
- Pulsed drain current: 18A
- Type of transistor: N-MOSFET