Транзистор: N-MOSFET Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 950V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 3500mΩ
- Polarisation: unipolar
- Power dissipation: 90W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET