Транзистор: N-MOSFET Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 75V
- Gate-source voltage: ±20V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 24mΩ
- Polarisation: unipolar
- Power dissipation: 100W
- Pulsed drain current: 160A
- Type of transistor: N-MOSFET