Транзистор: N-MOSFET Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 5A
- Drain-source voltage: 600V
- Gate-source voltage: ±25V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 600mΩ
- Polarisation: unipolar
- Power dissipation: 70W
- Pulsed drain current: 32A
- Type of transistor: N-MOSFET