Транзистор: N-MOSFET Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 9.4A
- Drain-source voltage: 650V
- Gate-source voltage: ±25V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 220mΩ
- Polarisation: unipolar
- Power dissipation: 110W
- Pulsed drain current: 60A
- Type of transistor: N-MOSFET