Транзистор: N-MOSFET; полевой; 500В; 6,3А; Idm: 40А; 125Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 6.3A
- Drain-source voltage: 500V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 520mΩ
- Polarisation: unipolar
- Power dissipation: 125W
- Pulsed drain current: 40A
- Technology: SuperMesh™
- Type of transistor: N-MOSFET