Транзистор: N-MOSFET Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 5.7A
- Drain-source voltage: 600V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±30V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 750mΩ
- Polarisation: unipolar
- Power dissipation: 115W
- Pulsed drain current: 36A
- Technology: SuperMesh™
- Type of transistor: N-MOSFET
