Транзистор: N-MOSFET; полевой; 20В; 500мА; Idm: 1А; 150мВт; SSM Технические параметры
- Case: SSM
- Channel kind: enhanced
- Drain current: 500mA
- Drain-source voltage: 20V
- Gate-source voltage: ±10V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 1.52Ω
- Polarisation: unipolar
- Power dissipation: 150mW
- Pulsed drain current: 1A
- Type of transistor: N-MOSFET