Транзистор: N-MOSFET; полевой; 60В; 6А; Idm: 24А; 2,4Вт; SOT23F Технические параметры
- Case: SOT23F
- Channel kind: enhanced
- Drain current: 6A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 69mΩ
- Polarisation: unipolar
- Power dissipation: 2.4W
- Pulsed drain current: 24A
- Type of transistor: N-MOSFET