Транзистор: P-MOSFET; полевой; -100В; -7,5А; 66Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: -7.5A
- Drain-source voltage: -100V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 300mΩ
- Polarisation: unipolar
- Power dissipation: 66W
- Type of transistor: P-MOSFET