Транзистор: N-MOSFET; 100В; 71А; Idm: 360А; 198Вт; SOT669,LFPAK56 Технические параметры
- Case: SOT669
- Channel kind: enhanced
- Drain current: 71A
- Drain-source voltage: 100V
- Gate charge: 38.5нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 19.8mΩ
- Polarisation: unipolar
- Power dissipation: 198W
- Pulsed drain current: 360A
- Type of transistor: N-MOSFET