Транзистор: N-MOSFET; 60В; 61А; Idm: 346А; 147Вт; LFPAK56,SOT1023 Технические параметры
- Case: SOT1023
- Channel kind: enhanced
- Drain current: 61A
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 60.6нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 19.7mΩ
- Polarisation: unipolar
- Power dissipation: 147W
- Pulsed drain current: 346A
- Type of transistor: N-MOSFET