Транзистор: N-MOSFET; 30В; 90А; Idm: 512А; 91Вт; LFPAK56,SOT1023 Технические параметры
- Case: SOT1023
- Channel kind: enhanced
- Drain current: 90A
- Drain-source voltage: 30V
- Features of semiconductor devices: logic level
- Gate charge: 46.4нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 5.1mΩ
- Polarisation: unipolar
- Power dissipation: 91W
- Pulsed drain current: 512A
- Type of transistor: N-MOSFET