Транзистор: N-MOSFET; 30В; 100А; Idm: 625А; 106Вт; LFPAK56,SOT1023 Технические параметры
- Case: SOT1023
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 30V
- Features of semiconductor devices: logic level
- Gate charge: 31.3нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 4mΩ
- Polarisation: unipolar
- Power dissipation: 106W
- Pulsed drain current: 625A
- Type of transistor: N-MOSFET