Транзистор: N-MOSFET; 80В; 26,5А; Idm: 150А; 95Вт; SOT669 Технические параметры
- Case: SOT669
- Channel kind: enhanced
- Drain current: 26.5A
- Drain-source voltage: 80V
- Features of semiconductor devices: logic level
- Gate charge: 34.3нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 67.8mΩ
- Polarisation: unipolar
- Power dissipation: 95W
- Pulsed drain current: 150A
- Type of transistor: N-MOSFET