Транзистор: N-MOSFET; 100В; 35А; Idm: 197А; 147Вт; SOT669 Технические параметры
- Case: SOT669
- Channel kind: enhanced
- Drain current: 35A
- Drain-source voltage: 100V
- Features of semiconductor devices: logic level
- Gate charge: 65.6нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 60.7mΩ
- Polarisation: unipolar
- Power dissipation: 147W
- Pulsed drain current: 197A
- Type of transistor: N-MOSFET